Investigation on the fabrication of sine  shaped surface  with large amplitude on the photoresist

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Investigation on the fabrication of sine shaped surface with large amplitude on the photoresist

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- Investigation on the fabrication of sine shaped surface with large amplitude on the photoresist
- Issue 3, (1999)
- 作者机构：
  
  1:中国科技大学国家同步辐射实验室
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：1999
- 稿件说明：
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Investigation on the fabrication of sine shaped surface with large amplitude on the photoresist[J]. 1999, (3).
DOI：

Investigation on the fabrication of sine shaped surface with large amplitude on the photoresist[J]. 1999, (3). DOI：

摘要

表面起伏靶是惯性约束聚变（ＩＣＦ）分解实验中的重要实验用靶。为了得到调制深度大于１０μｍ光刻胶表面正弦图形，采用激光全息光刻的方法，固定曝光条件，同时保证曝光量足够，然后通过控制显影条件来实现起伏深度的变化。成功得到了调制深度分别为１５μｍ，２５μｍ，３５μｍ，周期分别为２０μｍ，５５μｍ和７５μｍ的表面正弦调制图形

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Investigation on the fabrication of sine shaped surface with large amplitude on the photoresist

DOI：

摘要

Abstract

关键词

Keywords

references