Minimize the diffraction influence by resist process   optimization in X-ray lithography

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Minimize the diffraction influence by resist process optimization in X-ray lithography

更新时间：2025-09-01

- Minimize the diffraction influence by resist process optimization in X-ray lithography
- Issue 1, Pages: 52-53(2002)
- 作者机构：
  
  1:中国科技大学天文与应用物理系,合肥,230026
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：2002
- 稿件说明：
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Minimize the diffraction influence by resist process optimization in X-ray lithography[J]. 2002, (1): 52-53.
DOI：

Minimize the diffraction influence by resist process optimization in X-ray lithography[J]. 2002, (1): 52-53. DOI：

摘要

讨论了衍射效应在微米 /纳米X射线光刻中对分辨率的影响和抗蚀剂的预烘温度与其衬度的关系。分析发现增加抗蚀剂的衬度能有效地提高工艺的容裕度

减小衍射作用。实验表明

在预烘温度为 170℃时

正性抗蚀剂PMMA有最高的衬度为 4 46

负性抗蚀剂PN 114在预烘温度为 115℃时有最高的衬度为 8 40。给出了最佳预烘温度下使用两种抗蚀剂的X射线光刻的实验结果

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Related Institution

1:中国南方工业研究院

2:北京理工大学光电学院

1:Department of Electrical Electronic and Computer Engineering The University of Western Australia

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