混合面型极紫外光刻物镜优化设计

余思辰; 南雁北; 陈雨情; 闫旭; 刘丽辉; 李艳秋

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混合面型极紫外光刻物镜优化设计

光学加工与制造 | 更新时间：2025-10-09

- 混合面型极紫外光刻物镜优化设计
- Optical design of hybrid surface EUV lithography objective
- 光学技术 2025年51卷第4期页码：408-414
- 作者机构：
  
  北京理工大学光电学院光电成像技术与系统教育部重点实验室，北京 100081
- 作者简介：
  
  余思辰（2000— ），女，硕士研究生，从事高分辨成像技术方面的研究。277483660@qq.com
  liulihui@bit.edu.cn
- 基金信息：
  
  国家自然科学基金(62175014);国家科技重大专项(2017ZX02101006-001)
- DOI：
  中图分类号： TN305.7
- 收稿：2025-02-20，
  
  修回：2025-03-07，
  
  纸质出版：2025-07-20
- 稿件说明：
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余思辰,南雁北,陈雨情等.混合面型极紫外光刻物镜优化设计[J].光学技术,2025,51(04):408-414.

YU Sichen,NAN Yanbei,CHEN Yuqing,et al.Optical design of hybrid surface EUV lithography objective[J].OPTICAL TECHNIQUE,2025,51(04):408-414.
余思辰,南雁北,陈雨情等.混合面型极紫外光刻物镜优化设计[J].光学技术,2025,51(04):408-414. DOI：

YU Sichen,NAN Yanbei,CHEN Yuqing,et al.Optical design of hybrid surface EUV lithography objective[J].OPTICAL TECHNIQUE,2025,51(04):408-414. DOI：

摘要

数值孔径为0.33的极紫外光刻物镜由6面高阶非球面反射镜构成。然而，包含大口径非球面反射镜的物镜系统，对加工和检测精度要求更加严苛。提出一种混合面型优化的设计方法，即采用自由曲面、非球面反射镜交互迭代优化技术，将小口径非球面镜逐次替换为自由曲面，有效降低大口径反射镜的高阶系数，最大口径反射镜非球面系数由16阶降至10阶，显著降低了物镜加工和检测难度。采用这种方法设计了一套NA 0.33混合面型极紫外光刻物镜系统，物镜系统畸变值小于0.294nm、波前误差均方根值小于0.0143λ（λ=13.5nm）。通过反灵敏度法择选补偿器，物镜系统的公差容限提高了1个数量级，在97.7%的累积概率下，波前误差RMS小于0.037λ，光刻物镜系统的稳定性得到进一步提高。

Abstract

The extreme ultraviolet lithography objective with a numerical aperture of 0.33 is composed of 6 high-order aspheric mirrors. However

the objective system containing large-aperture aspheric mirrors has more stringent requirements on processing and detection accuracy. A design method for hybrid surface optimization is proposed. Small-aperture aspheric mirrors are replaced with free-form surfaces one by one using the interactive iterative optimization technology of free-form surfaces and aspheric mirrors. The high-order coefficients of large-aperture mirrors are effectively reduced

and the aspheric coefficient of the largest-aperture mirror is reduced from 16th order to 10th order. The difficulty of objective processing and detection is significantly reduced. A set of NA 0.33 hybrid surface extreme ultraviolet lithography objective system was designed using this method. The distortion value of the objective system is less than 0.294nm

and the root mean square value of the wavefront error is less than 0.0143λ （λ=13.5nm）. By selecting the compensator by the inverse sensitivity method

the tolerance of the objective system is improved by one order of magnitude. At a cumulative probability of 97.7%

the wavefront error RMS is less than 0.037λ

and the stability of the lithography objective system is further improved.

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references

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